Application of 3-D Transmission Electron Microscopy in Semiconductor Device Analysis
نویسندگان
چکیده
Based on the sample type, TEM imaging can be classified into cross-sectional TEM (XTEM) and planeview TEM (PTEM). The advantage of XTEM is that it shows stacked layer structures that reflect the manufacturing process steps. Plane-view TEM, on the other hand, is suitable for cases where either the exact defect location has not been isolated for XTEM or the anomaly has affected structures more laterally than vertically. A combination XTEM and PTEM will permit three-dimensional (3-D) characterization of the defect. A 3-D TEM technique has been developed for such a purpose.[1] Three-dimensional TEM observation denotes cross-sectional viewing of an original TEM sample that provides a two-dimensional (2-D) image. The original TEM sample can be either a cross section or a plane view.
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